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BC856BM3, NSVBC856BM3
General Purpose Transistor
PNP Silicon
This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
−65 −80 −5.0 −100
V V V mA
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
PD
265 mW 2.
NSVBC856BM3 Datasheet
