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BC818-40L, NSVBC818-40L
General Purpose Transistors
NPN Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
Characteristic
VCEO VCBO VEBO
IC
Symbol
25 30 5.0 500
Max
V V V mAdc
Unit
Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C
Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300 mW 2.
NSVBC818-40L Datasheet
