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NDDL1N60Z, NDTL1N60Z
Product Preview N-Channel Power MOSFET 600 V, 15 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
CStoenatdinyuSoutasteD, rTaCin=C2u5rr°eCnt(NRoqtJeC 1)
Continuous Drain Current Steady State, TC = 100°C
R(NqoJCte
1)
Pulsed Drain Current, tp = 10 ms PStoewaedryDSitsastiep,aTtiCon=–2R5°qCJC
Gate−to−Source Voltage
Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A)
Peak Diode Recovery (Note 2)
VDSS ID
ID
IDM PD
VGS EAS
dv/dt
600 0.8 0.3
V A
0.5 0.15 A
3.2 1.0
A
25 3 W
±30 V 60 mJ
4.5 V/ns
Source Current (Body Diode) Lead Temperature for Soldering Leads
IS
0.5 0.
NDTL1N60Z Datasheet
