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NDT02N60Z
N-Channel Power MOSFET 600 V, 8.0 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA Steady State, TC = 25°C
VDSS 600 V VGS ±30 V ID 0.3 A
Continuous Drain Current RqJA Steady State, TC = 100°C
ID 0.21 A
Power Dissipation – RqJA Steady State, TC = 25°C Pulsed Drain Current
Continuous Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (ID = 1.4 A)
PD
IDM IS EAS
2.0 W
5A 2.2 A 38 mJ
Peak Diode Recovery (Note 1)
dV/dt
4.
NDT02N60Z Datasheet
