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NDPL180N10B - Power MOSFET

Features

  • Ultra Low On-Resistance.
  • Low Gate Charge.
  • High Speed Switching.
  • 100% Avalanche Test.
  • Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature Storage Temperature VDSS VGSS ID IDL IDP PD Tj Tstg Source Current (.

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Full PDF Text Transcription

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NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel www.onsemi.
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