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NDFPD1N150C - N-Channel Power MOSFET

Features

  • On-resistance RDS(on)=100Ω(typ. ).
  • Input Capacitance Ciss=80pF(typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C TO-220F-3FS Ratings 1500 ±30 0.1 0.2 2.0 20 150 - 55 to +150 Unit V V A A W W °C.

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Datasheet Details

Part number NDFPD1N150C
Manufacturer onsemi
File Size 350.67 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NDFPD1N150C Datasheet

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Full PDF Text Transcription

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Ordering number : ENA2236 NDFPD1N150C N-Channel Power MOSFET 1500V, 0.1A, 150Ω, TO-220F-3FS http://onsemi.com Features • On-resistance RDS(on)=100Ω(typ.) • Input Capacitance Ciss=80pF(typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C TO-220F-3FS Ratings 1500 ±30 0.1 0.2 2.0 20 150 - 55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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