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NDF04N60ZH
Product Preview N-Channel Power MOSFET 600 V, 2.0 W
Features
• Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Typ Unit
Drain−to−Source Voltage Continuous Drain Current RqJC
VDSS ID
600 4.4 (Note 2)
V A
Continuous Drain Current RqJC, TA = 100°C
ID 2.8 A (Note 2)
Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14)
IDM
PD VGS EAS Vesd VISO
18 (Note 2)
28 ±30 120 3000 4500
A
W V mJ V V
Peak Diode Recovery
dv/dt
4.
NDF04N60ZH Datasheet
