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NDF08N50Z
N-Channel Power MOSFET 500 V, 0.85 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF08N50Z Unit
Drain−to−Source Voltage Continuous Drain Current RqJC (Note 1) Continuous Drain Current RqJC TA = 100°C (Note 1) Pulsed Drain Current, VGS @ 10 V Power Dissipation Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 7.5 A
VDSS ID ID
IDM
PD VGS EAS
500
V
8.5
A
5.4
A
34
A
35
W
±30
V
190
mJ
ESD (HBM) (JESD 22−A114)
Vesd
3500
V
RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
VISO
4500
V
dV/dt
4.
NDF08N50Z Datasheet
