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NDFP03N150C - N-Channel Power MOSFET

Features

  • On-resistance RDS(on)=8Ω(typ. ).
  • Input Capacitance Ciss=650pF(typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) VGSS ID IDL IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2.

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Datasheet Details

Part number NDFP03N150C
Manufacturer onsemi
File Size 377.11 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NDFP03N150C Datasheet

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Full PDF Text Transcription

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Ordering number : ENA2232 NDFP03N150C N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω, TO-220F-3FS http://onsemi.com Features • On-resistance RDS(on)=8Ω(typ.) • Input Capacitance Ciss=650pF(typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) VGSS ID IDL IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=50V, L=10mH, IAV=2A (Fig.1) *2 L≤10mH, Single Pulse PD Tch Tstg EAS IAV Tc=25°C TO-220F-3FS Ratings 1500 ±30 2.
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