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MC74VHC1GT08E - Single 2-Input AND Gate

Key Features

  • High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V.
  • Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C.
  • Partial Power Down Protection Provided on Inputs.
  • Balanced Propagation Delays.
  • Pin and Function Compatible with Other Standard Logic Families.
  • Chip Complexity: FETs = 62.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant www. onsemi. com SC.
  • 88A / SOT.
  • 353 / SC.
  • 70 DF SUFFIX CASE 4.

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Full PDF Text Transcription for MC74VHC1GT08E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MC74VHC1GT08E. For precise diagrams, and layout, please refer to the original PDF.

MC74VHC1GT08E Single 2-Input AND Gate The MC74VHC1GT08E is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. The internal circuit...

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ate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1GT08E input structure provides protection when voltages up to 5.5 V are applied, regardless of the supply voltage. This allows the MC74VHC1GT08E to be used to interface 5.0 V circuits to 3.0 V circuits. Features • High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V • Low Power Dissipation: ICC = 1.

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