Datasheet Details
| Part number | FGH50N6S2D |
|---|---|
| Manufacturer | onsemi |
| File Size | 394.43 KB |
| Description | N-Channel IGBT |
| Datasheet |
 FGH50N6S2D Datasheet
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General Description
SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS).
These LGC devices shorten delay times, and reduce the power requirement of the gate drive.
Key Features
- 100 kHz Operation at 390 V, 40 A.
- 200 kHz Operation at 390 V, 25 A.
- 600 V Switching SOA Capability.
- Typical Fall Time.
- Low Gate Charge 90 ns at TJ = 125°C 70 nC at VGE = 15 V.
- Low Plateau Voltage 6.5 V Typical.
- UIS Rated 480 mJ.
- Low Conduction Loss.
- This is a Pb.
- Free Device www. onsemi. com C G E E C G TO.
- 247.
- 3LD CASE 340CK.