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FGH50N3 - N-Channel IGBT

General Description

The FGH50N3 is a MOS gated high voltage switching device combining the best

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGH50N3 July 2002 FGH50N3 300V, PT N-Channel IGBT General Description The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Formerly Developmental Type TA49485 Features • Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max • Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . .