Datasheet4U Logo Datasheet4U.com

FGH50N3 - SMPS IGBT

General Description

for many high voltage switching applications operating at high frequencies where low conduction losses are essential.

This device has been optimized for medium frequency switch mode power supplies.

Key Features

  • Low Saturation Voltage: VCE(sat) = 1.4 V Max.
  • Low EOFF = 6.6 uJ/A.
  • SCWT = 8 ms @ = 125°C.
  • 300 V Switching SOA Capability.
  • Positive Temperature Coefficient above 50 A.
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FGH50N3 N-Channel IGBT Fairchild Semiconductor
FGH50N6S2 600V/ SMPS II Series N-Channel IGBT Fairchild Semiconductor
FGH50N6S2D 600V/ SMPS II Series N-Channel IGBT Fairchild Semiconductor
FGH50T65SQD Field Stop Trench IGBT Fairchild Semiconductor
FGH50T65UPD Field Stop Trench IGBT Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FGH50N6S2D N-Channel IGBT
FGH50T65SQD IGBT
FGH50T65UPD IGBT
FGH12040WD IGBT
FGH15T120SMD IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductor’s planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Features • Low Saturation Voltage: VCE(sat) = 1.4 V Max • Low EOFF = 6.6 uJ/A • SCWT = 8 ms @ = 125°C • 300 V Switching SOA Capability • Positive Temperature Coefficient above 50 A • This is a Pb−Free Device Applications • SMPS www.onsemi.com C G E EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH50N3 © Semiconductor Components Industries, LLC, 2005 February, 2020 − Rev.