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FDP18N50 - N-Channel MOSFET

General Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 220 mW (Typ. ) @ VGS = 10 V, ID = 9 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss (Typ. 25 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDP18N50
Manufacturer onsemi
File Size 514.93 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP18N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UniFETt 500 V, 18 A, 265 mW FDP18N50 / FDPF18N50 / FDPF18N50T Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 220 mW (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply DATA SHEET www.onsemi.