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FDP085N10A - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Ci

Key Features

  • RDS(on) = 7.35 mΩ (Typ. ) @ VGS = 10 V, ID = 96 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 31 nC (Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ Features • RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A • Fast Switching Speed • Low Gate Charge, QG = 31 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using ON Semiconductor's PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.