FDMC4D9P20X8 Datasheet Text
FDMC4D9P20X8
P‐Channel Power Trench) MOSFET
- 20 V,
- 75 A, 4.9 mW
General Description This P- Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
Features
- Max rDS(on) = 4.9 mW at VGS =
- 4.5 V, ID =
- 18 A
- Max rDS(on) = 16.4 mW at VGS =
- 1.8 V, ID =
- 9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity Protection
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
- 20
V...