FDMC4435BZ Datasheet Text
MOSFET
- P-Channel, POWERTRENCH)
-30 V, -18 A, 20 mW
FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max rDS(on) = 20 mW at VGS =
- 10 V, ID =
- 8.5 A
- Max rDS(on) = 37 mW at VGS =
- 4.5 V, ID =
- 6.3 A
- Extended VGSS Range (- 25 V) for Battery Applications
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- HBM ESD Protection Level > 7 kV Typical-
- 100% UIL Tested
- These Devices are Pb- Free and are RoHS pliant
Applications
- High Side in DC
- DC Buck Converters
- Notebook Battery Power Management
- Load Switch in Notebook
DATA SHEET .onsemi.
8765
SSSG
1234
DDDD
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