FDMC4435BZ Datasheet Text
FDMC4435BZ P-Channel Power Trench® MOSFET
FDMC4435BZ
P-Channel Power Trench® MOSFET
-30 V, -18 A, 20 mΩ
November 2015
Features
General Description
- Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A
- Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A
- Extended VGSS range (-25 V) for battery applications
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- HBM ESD protection level >7 kV typical (Note 4)
- 100% UIL Tested
- Termination is Lead-free and RoHS pliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Applications
- High side in DC
- DC Buck Converters
- Notebook battery power management
- Load switch in Notebook
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Pin 1
S SG...
