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FDB9503L-F085 - P-Channel Power MOSFET

Key Features

  • Typical RDS(on) = 2.0 mΩ at VGS = - 10V, ID = - 80 A.
  • Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101 GS TO-263AB FDB SERIES.

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FDB9503L-F085 P-Channel PowerTrench® MOSFET FDB9503L-F085 P-Channel PowerTrench® MOSFET - 40 V, - 110 A, 2.6 mΩ S D Features „ Typical RDS(on) = 2.0 mΩ at VGS = - 10V, ID = - 80 A „ Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 GS TO-263AB FDB SERIES Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Electrical Power Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.