FDB9406_F085 - N-Channel MOSFET

Fairchild (now onsemi)

Key Features

Typ RDS(on) = 1.31mΩ at VGS = 10V, ID = 80A.
Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A.
UIS Capability.
RoHS Compliant.
Qualified to AEC Q101.

FDB9406_F085 n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDB9406_F085
Manufacturer	Fairchild (now onsemi)
File Size	400.65 KB
Description	N-Channel MOSFET
Datasheet	FDB9406_F085 Datasheet

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Full PDF Text Transcription (Reference)

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FDB9406_F085 N-Channel PowerTrench® MOSFET June 2014 FDB9406_F085 N-Channel PowerTrench® MOSFET 40 V, 110 A, 1.8 mΩ Features Typ RDS(on) = 1.31mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications DD GS TO-263 FDB SERIES G S Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.