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FDB1D7N10CL7 - 100V 268A N-Channel Shielded Gate MOSFET

General Description

This N

Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A.
  • Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A.
  • Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A.
  • Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • ESD Protection Level: HBM > 4 kV, CDM > 2 kV.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.

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Datasheet Details

Part number FDB1D7N10CL7
Manufacturer onsemi
File Size 349.38 KB
Description 100V 268A N-Channel Shielded Gate MOSFET
Datasheet download datasheet FDB1D7N10CL7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Shielded Gate POWERTRENCH) MOSFET 100 V, 1.7 mW, 268 A FDB1D7N10CL7 Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A • Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A • Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A • Max RDS(on) = 4.