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FCH190N65F-F085 - N-Channel MOSFET

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive.

Overview

MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.6 A, 190 mW FCH190N65F-F085.

Key Features

  • Typ. RDS(on) = 148 mW at VGS = 10 V, ID = 10 A.
  • Typ. Qg(tot) = 63 nC at VGS = 10 V, ID = 10 A.
  • UIS Capability.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.