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FCH125N60E - N-Channel MOSFET

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

Consequently, SUPERFET II MOSFET easy−drive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series.

Overview

MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 29 A, 125.

Key Features

  • Typ. RDS(on) = 102 mW.
  • 650 V @ TJ = 150°C.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 258 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.