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FCH104N60F - N-Channel MOSFET

General Description

SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Overview

MOSFET – N-Channel, SUPERFET) II, FRFET) 600 V, 37 A, 104 mW FCH104N60F.

Key Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 98 mW.
  • Ultra Low Gate Charge (Typ. Qg = 107 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 109 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.