Full PDF Text Transcription for BF493S (Reference)
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BF493S. For precise diagrams, and layout, please refer to the original PDF.
BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Vo...
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ng Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above = 25°C Symbol VCEO VCBO VEBO IC PD Value −350 −350 −6.0 −500 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum
BF493S Datasheet
