Full PDF Text Transcription for BF493S (Reference)
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF493S/D High Voltage Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BF493S 1 2 3 MAXIMUM RATINGS Rating...
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licon COLLECTOR 3 2 BASE 1 EMITTER BF493S 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –350 –350 –6.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ca
BF493S Datasheet
