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BF422 - High Voltage Transistors

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF420/D High Voltage Transistors NPN Silicon COLLECTOR 2 3 BASE BF420 BF422 1 EMITTER MAXIMUM RATINGS Rating ...

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licon COLLECTOR 2 3 BASE BF420 BF422 1 EMITTER MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 300 250 300 250 5.0 500 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C 1.5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJ