Datasheet4U Logo Datasheet4U.com

PMN42XPEA - P-channel Trench MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Fast switching.
  • Trench MOSFET technology.
  • 2 kV ESD protection.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

Datasheet preview – PMN42XPEA

Datasheet Details

Part number PMN42XPEA
Manufacturer NXP
File Size 265.10 KB
Description P-channel Trench MOSFET
Datasheet download datasheet PMN42XPEA Datasheet
Additional preview pages of the PMN42XPEA datasheet.

📁 Similar Datasheet

  • PMN42XPEA - P-channel MOSFET (nexperia)
  • PMN42XPE - MOSFET (NXP Semiconductors)
  • PMN40ENA - N-channel MOSFET (nexperia)
  • PMN40ENE - N-channel MOSFET (nexperia)
  • PMN40LN - logic level FET (Philips)
  • PMN40UPE - MOSFET (NXP Semiconductors)
  • PMN45EN - MOSFET (Philips)
  • PMN45EN - enhanced logic level FET (NXP Semiconductors)
  • PMN48XP - MOSFET (NXP Semiconductors)
  • PMN48XP - P-channel MOSFET (nexperia)
Other Datasheets by NXP
  • PMN40LN - logic level FET
  • PMN40UPEA - single P-channel Trench MOSFET
  • PMN27XPEA - single P-channel Trench MOSFET
  • PMN35EN - MOSFET
  • PMN38EN - N-channel TrenchMOS logic level FET
  • PMN50XP - P-channel TrenchMOS extremely low level FET
  • PMN55LN - uTrenchMOS logic level FET

Full PDF Text Transcription

Click to expand full text
SOT457 PMN42XPEA 20 V, P-channel Trench MOSFET 21 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Fast switching • Trench MOSFET technology • 2 kV ESD protection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.
Published: |