Click to expand full text
SO T4 57
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
Rev. 1 — 20 July 2011 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 5.1 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20 -
Typ 25
Max 30 20 5.
PMN35EN Datasheet
