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PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
Rev. 1 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low RDSon Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver
High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics
Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C
--
-12 -
[1] -
-
-20 V 12 V -4.1 A
RDSon
drain-source on-state VGS = -4.
PMN48XP Datasheet
