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PHX23NQ10T - N-channel TrenchMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies

T.V.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching SYMBOL d QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHX23NQ10T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 13 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies • T.V. and computer monitor power supplies The PHX23NQ10T is supplied in the SOT186A (FPAK) conventional leaded package.
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