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PHX18NQ11T
N-channel TrenchMOS™ standard level FET
M3D308
Rev. 01 — 13 February 2004
Product data
1. Product profile
1.1 Description
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N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance
1.3 Applications
s DC-to-DC converters s Switched-mode power supplies
1.4 Quick reference data
s VDS ≤ 110 V s Ptot ≤ 31.2 W s ID ≤ 12.5 A s RDSon ≤ 90 mΩ
2.
PHX18NQ11T Datasheet
