Datasheet4U Logo Datasheet4U.com

PHX6N60E - N-Channel 650V Power MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Datasheet Details

Part number PHX6N60E
Manufacturer VBsemi
File Size 286.60 KB
Description N-Channel 650V Power MOSFET
Datasheet download datasheet PHX6N60E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHX6N60E PowerMOS transistors NXP
PHX6N50E PowerMOS transistors Avalanche energy rated NXP
PHX6NA60E PowerMOS transistors Low capacitance Avalanche energy rated NXP
PHX6ND50E PowerMOS transistors FREDFET/ Avalanche energy rated NXP
PHX10N40E PowerMOS transistors Avalanche energy rated NXP

Other Datasheets by VBsemi

Part Number Description
PHX4N50E N-channel 650V Power MOSFET

Full PDF Text Transcription

Click to expand full text
PHX6N60E-VB PHX6N60E-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V 1.
Published: |