Datasheet4U Logo Datasheet4U.com

PHD10N10E - Transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHD13003C NPN power transistor WeEn
PHD16N03LT N-channel TrenchMOS logic level FET NXP Semiconductors
PHD16N03T TrenchMOS standard level FET NXP Semiconductors
PHD20N06T N-channel TrenchMOS standard level FET nexperia
PHD22NQ20T N-channel TrenchMOS standard level FET NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
PHD101NQ03LT N-Channel MOSFET
PHD108NQ03LT N-Channel MOSFET
PHD110NQ03LT N-channel FET
PHD11N03LT N-Channel MOSFET
PHD11N06LT Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 100 11 60 175 0.
Published: |