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DPAK
PHD101NQ03LT
N-channel TrenchMOS logic level FET
Rev. 5 — 31 October 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Simple gate drive required due to low gate charge
Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC converters
1.4 Quick reference data
Table 1.
PHD101NQ03LT Datasheet
