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PHD108NQ03LT
N-channel TrenchMOS logic level FET
Rev. 04 — 5 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Simple gate drive required due to low gate charge
Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1.
PHD108NQ03LT Datasheet
