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BUT11AX - Silicon Diffused Power Transistor

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Description

High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

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Datasheet Details

Part number BUT11AX
Manufacturer NXP
File Size 118.59 KB
Description Silicon Diffused Power Transistor
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 2.5 150 MAX. 1000 450 5 10 32 1.
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