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BUT11XI - Silicon Diffused Power Transistor

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Description

High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

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Datasheet Details

Part number BUT11XI
Manufacturer NXP
File Size 69.33 KB
Description Silicon Diffused Power Transistor
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 2.5 80 MAX. 1000 450 5 10 32 1.5 150 UNIT V V A A W V A ns Ths ≤ 25 ˚C IC = 2.5 A; IB = 0.33 A ICon=2.5 A; IBon=0.
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