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BUK95150-55A - N-channel transistor

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Key Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

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Full PDF Text Transcription for BUK95150-55A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK95150-55A. For precise diagrams, and layout, please refer to the original PDF.

Philips Semiconductors TrenchMOS transistor Logic level FET Product specification BUK95150-55A BUK96150-55A GENERAL DESCRIPTION N-channel enhancement mode logic level fi...

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6150-55A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. PINNING TO220AB & SOT404 PIN DESCRIPTION 1 gate 2 drain 3 source tab/mb drain QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj RDS(ON) Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX.

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