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BUK9515-100A - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • AEC Q101 compliant.
  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription for BUK9515-100A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9515-100A. For precise diagrams, and layout, please refer to the original PDF.

TO-220AB BUK9515-100A N-channel TrenchMOS logic level FET Rev. 3 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhan...

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1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1.

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