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BUK9512-55B - logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability: BUK9512-55B in SOT78 (TO-220AB) BUK9612-55B in SOT404 (D2-PAK).

Key Features

  • s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Full PDF Text Transcription for BUK9512-55B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK9512-55B. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com BUK95/9612-55B TrenchMOS™ logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effec...

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. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9512-55B in SOT78 (TO-220AB) BUK9612-55B in SOT404 (D2-PAK). 1.2 Features s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 172 mJ s ID ≤ 75 A s RDSon = 10.2 mΩ (typ) s Ptot ≤ 157 W. 2.

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