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BU2730 - Silicon Diffused Power Transistor

Description

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

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Full PDF Text Transcription

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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2730AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 9 3.5 MAX. 1700 825 16 40 125 5.0 4.5 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 9 A; IB = 1.
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