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BU2708DF - Silicon Diffused Power Transistor

Description

High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.

Intended for use in horizontal deflection circuits of colour television receivers.

Features

  • exceptional tolerance to base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand VCES pulses up to 1700V. QUICK.

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Full PDF Text Transcription

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand VCES pulses up to 1700V.
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