Datasheet4U Logo Datasheet4U.com

BU2708AF - Silicon Diffused Power Transistor

Description

High voltage, high speed switching npn transistor in a plastic full-pack envelope.

Intended for use in horizontal deflection circuits of colour television receivers.

Features

  • exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V. QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU2708AF NPN Transistor INCHANGE
BU2708AX NPN Transistor INCHANGE
BU2708DF SILICON POWER TRANSISTOR SavantIC
BU27006MUC-Z Color Sensor ROHM
BU27030NUC Ambient Light Sensor ROHM

Other Datasheets by NXP Semiconductors

Part Number Description
BU2708AX Silicon Diffused Power Transistor
BU2708DF Silicon Diffused Power Transistor
BU2708DX Silicon Diffused Power Transistor
BU2720AF Silicon Diffused Power Transistor
BU2720AX Silicon Diffused Power Transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 4 4.8 MAX.
Published: |