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BLW98 - UHF linear power transistor

Description

N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f.

amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems.

Features

  • diffused emitter ballasting resistors for an optimum temperature profile;.
  • gold sandwich metallization ensures excellent reliability. The transistor has a 1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud. BLW98 QUICK.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. FEATURES: • diffused emitter ballasting resistors for an optimum temperature profile; • gold sandwich metallization ensures excellent reliability. The transistor has a 1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud. BLW98 QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION class-A class-A Note 1.
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