Datasheet4U Logo Datasheet4U.com

BLW90 - UHF power transistor

Description

N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f.

and v.h.f.

range for a nominal supply voltage of 28 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLW31 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW34 NPN SILICON RF POWER TRANSISTOR ASI
BLW75 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
BLW81 UHF power transistor ELEFLOW TECHNOLOGIES
BLW81 NPN SILICON RF POWER TRANSISTOR ASI

Other Datasheets by NXP Semiconductors

Part Number Description
BLW90 UHF power transistor
BLW95 HF Power Transistor
BLW96 HF/VHF power transistor
BLW97 HF power transistor
BLW98 UHF linear power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. All leads are isolated from the stud. BLW90 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w.
Published: |