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BLV99 - UHF power transistor

Description

NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap.

It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band.

All leads are isolated from the mounting base.

Features

  • Emitter-ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. PINNING - SOT172D PIN 1 2 3 4 base collector emitter DESCRIPTION emitter WARNING Product and environmental safety - toxic materials 2 3 handbook, halfpage halfpage BLV99/SL PIN CONFIGURATION 1 c b MBB012 e 4 Top view MSB007 Fig.
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