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BLV97 - UHF power transistor

Description

NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band.

The transistor has a 6-lead flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • Internal input matching to achieve high power gain.
  • Ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability DESCRIPTION BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB circuit. MODE OF OPERATION c.w.
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