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BLV958FL - UHF power transistors

Description

NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation.

The transistors have internal input and output matching by means of MOS capacitors.

Features

  • Internal input and output matching for easy matching, high gain and efficiency.
  • Poly-silicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 1997 Oct 15 2000 Jan 12 Philips Semiconductors Product specification UHF power transistors FEATURES • Internal input and output matching for easy matching, high gain and efficiency • Poly-silicon emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base stations in the 800 to 960 MHz frequency range. PINNING - SOT391A PIN 1 2 3 SYMBOL c b e base emitter; connected to flange DESCRIPTION collector PINNING - SOT391B PIN 1 2 Ground plane DESCRIPTION BLV958; BLV958FL NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation.
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