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BLT92 - UHF power transistor

Description

NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band.

This device has been designed specifically for class-B operation.

Features

  • internal input matching capacitor for a high power gain.
  • gold metallization ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation. PIN CONFIGURATION FEATURES • internal input matching capacitor for a high power gain • gold metallization ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. PINNING 1 = collector 2 = emitter 3 = base 4 = emitter Fig.1 Simplified outline, SOT122D.
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